Isobutylgermane

Isobutylgermane, (IBGe), (CH₃)₂CHCH₂GeH₃, is a safer germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to toxic germane gas that is useful in deposition of Ge films and/or SiGe films or strained silicon. IBGe is a non-pyrophoric source with very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (ca 400 C), coupled with advantages of extremely low carbon incorporation and substantially reduced main group elemental impurities in epitaxially grown germanium comprising layers.

Rohm and Haas Electronic Materials LLC, North Andover, Massachusetts, USA and Laboratoire de Photonique et de Nanostructures, LPN CNRS, Marcoussis, France have developed a novel process to grow germanium films on germanium at low temperatures in a MOVPE reactor using isobutylgermane. The research targets Ge/III-V hetero devices, and the researchers hope to advance the integration of compound semiconductor devices on silicon and other substrates. The breakthrough was presented at the ACCGE-16 at the Big Sky Resort in Montana in the USA. Using the new and less toxic precursor isobutylgermane, the group at LPN-CNRS demonstrated the growth of high quality germanium films at temperatures as low 500 C. The low growth temperature and the new precursor are expected to virtually eliminate a memory effect of germanium in the III-V material.

References:

• Designing Novel Organogermanium OMVPE Precursors for Germanium, High Purity Strained Silicon and Relaxed SiGe Structures; Dr. Deodatta V. Shenai-Khatkhate, Microelectronic Technologies, Rohm and Haas Electronic Materials LLC, USA; Presentation at ACCGE-16, Montana, USA, July 11, 2005.

• Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si

• Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films Journal of Crystal Growth, January 25, 2006.

• Ge Precursors for Strained Si and Compound Semiconductors; Semiconductor International; April 1, 2006.

• 摘要 随着Ge重要性的提高，需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。; Semiconductor International Chinese Edition; June 1, 2006.

• 歪みSiと化合物半導体向けの Geプリカーサ; Semiconductor International Japanese Edition; August 1, 2006.

• Rohm and Haas Electronic Materials Devises Germanium Film Growth Process; CompoundSemi News, September 23, 2005.

• High Purity Germanium Film; III-Vs Review, September 23, 2005.

• Development of New Germanium Precursors for SiGe Epitaxy; Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006.